LSK389-B-TO-71 [Linear Systems]
ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER;型号: | LSK389-B-TO-71 |
厂家: | Linear Systems |
描述: | ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER 放大器 |
文件: | 总2页 (文件大小:238K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LSK389
ULTRA LOW NOISE
MONOLITHIC DUAL
N-CHANNEL JFET AMPLIFIER
FEATURES
ULTRA LOW NOISE
TIGHT MATCHING
HIGH BREAKDOWN VOLTAGE
HIGH GAIN
en = 0.9nV/√Hz (typ)
IVGS1-2I= 20mV max
BVGSS = 40V max
Gfs = 20mS (typ)
25pF typ
LOW CAPACITANCE
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150°C
-55 to +135°C
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +25°C
Maximum Currents
SOIC-A
TO-71
400mW
Top View
Top View
Gate Forward Current
Maximum Voltages
IG(F) = 10mA
* For equivalent single version, see LSK170 family
Gate to Source
VGSS = 40V
VGDS = 40V
Gate to Drain
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
Differential Gate to Source Cutoff
Voltage
V
GS1 VGS2
20
mV
---
VDS = 10V, ID = 1mA
VDS = 10V, VGS = 0V
I
DSS1
Gate to Source Saturation Current Ratio 0.9
I
DSS2
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
BVGSS
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
Gate to Source Breakdown Voltage
Gate to Source Pinch-off Voltage
-40
-0.15
2.6
6
V
V
VDS = 0, ID = -100µA
VDS = 10V, ID = 0.1µA
VGS(OFF)
-2
6.5
12
LSK389A
LSK389B
LSK389C
LSK389D
Drain to Source Saturation
Current
IDSS
mA
VDS = 10V, VGS = 0
VGS = -30V, VDS = 0
10
20
17
30
IGSS
Gate to Source Leakage Current
Gate to Gate Isolation Current
-200
±1.0
pA
µA
IG1G2
VG1-G2 = ±45V, ID = IS = 0A
Note: All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201122 5/02/2014 Rev#A7 ECN# LSK389
ELECTRICAL CHARACTERISTICS CONT. @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
Gfs
Full Conduction Transconductance
8
20
0.9
2.5
mS
VDS = 10V, VGS = 0, f = 1kHz
VDS = 10V, ID = 2mA, f = 1kHz,
NBW = 1Hz
VDS = 10V, ID = 2mA, f = 10Hz,
NBW = 1Hz
en
en
Noise Voltage
Noise Voltage
1.9 Nv/√Hz
4
Nv/√Hz
CISS
Common Source Input Capacitance
25
pF
pF
VDS = 10V, VGS = 0, f = 1MHz,
VDG = 10V, ID = 0, f = 1MHz,
CRSS
Common Source Reverse Transfer Cap.
5.5
ORDERING INFORMATION
LSK389 -
-
SOIC-8
A
Package
IDSS Range
A 2.6 - 6.5 mA
B 6 - 12 mA
TO-71 6L
TO-71
C 10 - 20 mA
D 17 - 30 mA
SOIC-A 8L
SOIC-8
PACKAGE DIMENSIONS
TO-71
SOIC-A
0.210
0.170
Note: All Dimensions in inches
NOTES:
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201122 5/02/2014 Rev#A7 ECN# LSK389
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